"The study of the key fundamental issues of phase change memory scale manufacturing technology" passed the inspection

On September 30th, the final acceptance of the project of the National Key Research Project of Nanoscale Scientific Research for Phase-change Memory Scale Manufacturing Technology was held at the Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences.

Academician Si Sishen, Institute of Physics, Chinese Academy of Sciences; Academician Wang Yan, Director of Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences; Professor Xue Zengquan, Professor of Peking University; Professor Feng Songlin, President of Shanghai Institute of Advanced Study, Chinese Academy of Sciences; Professor Chen Kunji, Nanjing University; Fu Guoqing, Director of the Basic Committee of the Committee, Zhao Huibin, Deputy Director of the Technical Science Division of the Frontier Science and Education Bureau of the Chinese Academy of Sciences, Professor Dai Ning, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Prof. Chen Lidong, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Prof. Guoquan Guo, Shanghai Academy of Sciences, Prof. Sun Zhu of East China Normal University, Xie Zhifeng, General Manager of Shanghai Han Rui Technology Co., Ltd., and Wu Hanming, Vice President of SMIC International (Shanghai) Co., Ltd., and 14 review experts, Dr. Xudong Yang, a major scientific research program of the Basic Department of the Ministry of Science and Technology, Liu Haifeng, Director of Shanghai Science and Technology Reward Center, Miao Benjun, Basic Division of Shanghai Science and Technology Commission, Cheng Jiangong, Minister of Science and Technology of Shanghai Institute of Microsystems, Chinese Academy of Sciences, Project Manager Chen Huaxia, and Project Team Song Zhijun Researcher, Liu Bo Researcher, Zhan Xiaopeng Technical Director, After Peng researcher, associate researcher Song three years, Dr. Chen Yifeng, a researcher Chen Bangming total of more than 50 people attended the meeting. The acceptance meeting was chaired by Xie Sishen.

Researcher Song Zhijun, the director of the State Key Laboratory of Functional Materials for Information Technology, Shanghai Institute of Microsystems, welcomes experts and leaders to participate in this topic acceptance meeting. Dr. Yang Xudong introduced the relevant requirements and regulations for project acceptance. Zhao Huibin made a speech. He proposed that he must consider the direction of follow-up development and have further research plans. At the same time, he must strictly abide by the provisions of the State and Academy of Sciences on funding and standardize the use of funds.

Fu Guoqing believes that such a basic issue provides a good theoretical basis for large-scale manufacturing and hopes that the experts will provide valuable opinions and provide good suggestions for the project's report and future development. The Shanghai Science and Technology Commission will continue to give stand by. Academician Wang Hao, on behalf of Shanghai Microsystems Corporation, thanked the experts for participating in the acceptance meeting. He said that memory is a weak link in the semiconductor industry, and China’s power in the field of memory is also weak. Therefore, it is necessary to be able to transfer basic research results to the domestic semiconductor industry. After the transfer, the research team has made unremitting efforts to achieve the development of PCRAM from 8-inch 130nm to 12-inch 40nm nodes with the support of SMIC, and is very remarkable. We hope to receive further experts and leadership in the new memory area in the future. support.

Professor Song Zhijun made a report on the international development trend of PCRAM and the product development routes of major companies, and clarified the future development focus and direction of PCRAM team. Professor Liu Bo made a general report on the objectives, research contents, and completion of the project. The attending experts listened to detailed reports in various directions for specific situations: Chen Houpeng's researcher reported the completion of the PCRAM circuit and chip design; Zhan Yipeng's technical director reported on the PCRAM chip's single process and its integrated technology development; Song three years associate researcher reported the subject. The group was in the application of independent new material research and development and independent materials in engineering; Dr. Chen Yifeng reported the completion of PCRAM chip testing.

The expert group commented on the completion of the project and the scientific research results. It also provided targeted and valuable suggestions and guidance. The task force was required to organize the project summary report in accordance with the latest “973” project acceptance requirements, concise the highlights, and highlight the project. The main line. Academician Si Sishen said that the combination of the enterprise and the institute itself is a very distinctive organizational model for production, research, and research. It must fully demonstrate the characteristics, progress, major scientific contributions, and core technological progress of the project. Professor Xue Zengquan proposed to strengthen the substantive comparison with relevant research indicators of major international companies and highlight the scientific issues and key technical issues of basic research.

Finally, the expert group carefully reviewed the relevant technical documents and data, and considered that all technical indicators fully met the requirements of the contract, fulfilled the pre-determined research objectives, and agreed that the project subject passed acceptance.

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General Specification Table for reference

 

Material

Wire diameter

Mesh (inch)

Standard Roll

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23Gauge

1/4" x 1/4"

Width:

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Length: 100`

21 Gauge

1/3" x 1/3"

19 Gauge

1/2" x 1/2"

18 Gauge

1/2" x 1/2"

16 Gauge

1/2" x 1/2", 1/2" x 1",

1" x 1", 2" x 2"

14 Gauge

1" x 1", 1" x 2", 2" x 2"

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